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| HTX8-600 VDRM = 600 V HTX8-600 600V 8A TRIAC IT(RMS) = 8.0 A 1.T1 2. T2 3. Gate FEATURES Repetitive Peak Off-State Voltage: 600V R.M.S On -State Current (IT(RMS) = 8A) High Commutation dv/dt TO-220 TO-220F 1 1 2 3 2 3 HTP8-600 HTS8-600 General Description The TRIAC HTP8-600 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM VGM IGM PGM VISO TSTG TJ (Ta=25) Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current (Ta = 105) R.M.S On-State Current (Ta = 89) Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) Peak Gate Voltage Peak Gate Current Peak Gate Power Dissipation Isolation Breakdown Boltate, AC RMS 1Min Storage Temperature Range Operating Temperature (HTS8-600 only) HTP8-600 HTS8-600 50Hz 60Hz Value 600 8 80 88 10 2 5 1500 -40 to +125 -40 to +125 Units V A A A V A W V SEMIHOW REV.A0,Dec 2010 HTX8-600 Electrical Characteristics Symbol IGT VGT VGD (dv/dt)c IH IDRM VTM Parameter Gate Trigger Current Gate Trigger Voltage Non Trigger Gate Voltage (Ta=25) Test Conditions VD=6V, RL=10 VD=6V, RL=10 TJ125, VD=1/2VDRM TJ=125, VD=2/3VDRM (di/dt)c=4A/ms VD=VDRM, Single Phase Half Wave, TJ=125 IT=12A, Inst, Measurement 1+, 1-, 31+, 1-, 3- Min Typ Max 30 1.5 Units mA V V V/uS 0.2 5.0 15 2.0 1.4 Critical Rate of Rise of Off-State Voltage at Communication Holding Current Repetitive Peak Off-State Current Peak On-State Voltage mA mA V Thermal Characteristics Symbol RJC Parameter Thermal Resistance Test Conditions Junction to Case Case HTP8-600 HTS8-600 Min Typ Max 2 3.7 Units /W /W SEMIHOW REV.A0,Dec 2010 HTX8-600 Typical Characteristics Fig 1. Gate Characteristics Fig 2. On-State Voltage 10 On-State Current [A] Gate Voltage [V] 1 0.1 101 102 Gate Current [mA] 103 On-State Voltage [V] Fig 3. Gate Trigger Voltage vs. Junction Temperature Fig 4. On-State Current vs. Maximum power Dissipation Power Dissipation [W] Junction Temperature [] RMS On-State Current [A] Fig 5. On-State Current vs. Allowable Case Temperature Fig 6. Surge On-State Current Rating (Non-Repetitive) Surge On-State Current [A] Allowable Case Temp [] 100 RMS On-State Current [A] 101 Time [Cycles] 102 SEMIHOW REV.A0,Dec 2010 HTX8-600 Typical Characteristics Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance Transient Thermal Impedance [/W] Junction Temperature [] Time [Sec] Fig 7. Gate Trigger Characteristics Test Circuit SEMIHOW REV.A0,Dec 2010 HTX8-600 Package Dimension HTP8-600 (TO-220) 9.900.20 3 0 .6 0. 20 4.500.20 1.300.20 15.700.20 2.800.20 9.190.20 6.500.20 13.080.20 0.800.20 2.54typ 2.54typ 0.500.20 3.020.20 1.270.20 1.520.20 2.400.20 SEMIHOW REV.A0,Dec 2010 HTX8-600 Package Dimension HTS8-600 (TO-220F) 0.20 .18 3 0 0.2 0.20 2.540.20 0.700.20 15.870.20 3.300.20 12.420.20 6.680.20 2.760.20 9.750.20 1.47max 0.800.20 2.54typ 2.54typ 0.500.20 SEMIHOW REV.A0,Dec 2010 |
Price & Availability of HTX8-600
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